Technology Development of 3-D Detectors for High
Energy Physics and Imaging
Giulio Pellegrini1, 2
P.Roy2, R.Bates2,
D.Jones3, K.Mathieson2,
J.Melone2, V.O’Shea2,
K.M.Smith2, I.Thayne1,
P.Thornton2,
J.Linnros4, W.Rodden5, M.Rahman2.
1 Department of Electronics and Electrical Engineering,
Glasgow University, G128QQ UK.
2 Department of Physics and Astronomy,
Glasgow University, G128QQ UK.
3Department of Physics and
Applied Physics,
University of Strathclyde, UK.
4KTH Royal Institute of Technology
S-16440 Kista, Sweden.
5Heriot Watt University,
Edinburgh EH144AS, UK.
Abstract
Various fabrications routes to create ‘3D’ detectors have been investigated and the electrical characteristics of these structures have been compared to simulations. The geometry of the detectors is hexagonal with a central anode surrounded by six cathode contacts. A uniform electric field is obtained with the maximum drift and depletion distance set by electrode spacings rather than detector thickness. This should improve the ability of silicon to operate in the presence of the severe bulk radiation damage expected in high-energy colliders. Moreover, 3D detectors made with other materials (e.g. GaAs, SiC) may be used for example in X-ray detection for medical imaging. Holes in the substrate were made either by etching with an inductively coupled plasma machine, by laser drilling or by photochemical etching. A number of different hole diameters and thickness have been investigated. Experimental characteristics have been compared to MEDICI simulations.
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