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The extended knowledge of the mechanism of charge transport in GaAs has led to detectors with 100% CCE. ATLAS prototype strip detectors have been fabricated and test-beam results are being analysed. The required specifications for ATLAS pixel detectors have been met. While the reduction in CCE due to charged hadron irradiation is severe in conventional LEC material, low carbon material or Tomsk technology may provide better radiation resistance. The flux dependence of CCE degradation has to be investigated further. X-ray detection with bulk-grown and VPE GaAs is under investigation. At present, leakage current noise limits the obtainable resolution for room temperature operation.

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