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SPICE calculation

  figure80
Figure 6: Schematic of the circuit used in the SPICE simulation. Cis is the inter-strip capacitance, Cbp is the capacitance to the backplane, RL is the load resistance of the amplifier. The biasing structure is represented by a parallel RC. Current sources from two neighbouring strips are taken into account. An array of seven strips was simulated.  

In order to calculate the signal reaching each preamplifier the front-end and bias coupling network was simulated using SPICE. The parameters depend mainly on the detector geometry. The main parameters are the inter-strip capacitance, depending on pitch, aspect ratio and strip length, the strip to back contact capacitance and the decoupling capacitance. The biasing structure, based on punch-through was also included as a 10 G tex2html_wrap_inline540 resistor with a 20 fF capacitance in parallel. A schematic is shown in fig. 6. Resistors had to be used to ensure a DC path to nodes.

The signals from two neighbouring strips were included as two independent piece-wise linear current generators. The current values were calculated with the drift code described previously, simulating tracks impinging perpendicularly on the strips; the hit position was varied from the centre of the central strip to the centre of the neighbouring one on the right. It was assumed that all strips were read-out. In simulating the signal a symmetry relation was assumed, i.e. ij(t)|y=y0 = ij+1(t)|y=p-y0 where p is the pitch, and y0 is the distance of the track from the centre of the jth strip.

  figure90
Figure 7: Plot of the tex2html_wrap_inline432 variable defined as: tex2html_wrap_inline552 , where x is the distance from the centre of the strip. The detector is tex2html_wrap_inline412 thick, pitch is tex2html_wrap_inline414 , metal width is tex2html_wrap_inline416 .  

The current signal at the preamplifier input was calculated and then integrated to give the total charge detected by each channel. An tex2html_wrap_inline432 function [16], related directly to spatial resolution could be calculated for the given configuration. An example is shown in fig. 7.


next up previous
Next: A model for the Up: Microstrip detector simulation Previous: Drift of charge carriers

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